• Fet J310
• J310 Datasheet Pdf
• J309 Fet

The J310 is a high-Idss device, much higher than the general JFETs like your MPF102, 2N3819, 2N4416, etc. It's also the defacto device (along with the same die in a metal can, the U310 which is what I use) for almost all active whip-amps that use a JFET as the input device. J310 JFET are available at Mouser Electronics. Mouser offers inventory, pricing, & datasheets for J310 JFET. This FET preamplifier has been around for almost 25 years. It is extremely reliable and can handle several watts directly into either the input or the output without failure. Noise figure is typically around 1 db and gain is about 13 db. It is unconditionally stable. It is also very re-produceable.

Type Designator: J310

Type of Transistor: JFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 0.4 W

Maximum Drain-Source Voltage |Vds|: 25 V

Minimum Gate-to-Source Cutoff Voltage |Vgs(off)|: -2 V

Maximum Drain Current |Id|: 0.05 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 50 Ohm

Package: TO92

J310 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

J310 Datasheet (PDF)

Fet J310

0.1. mmbfj309 mmbfj310.pdf Size:165K _motorola

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBFJ309LT1/DJFET VHF/UHF Amplifier TransistorMMBFJ309LT1N Channel2 SOURCEMMBFJ310LT13GATE1 DRAIN31MAXIMUM RATING

0.2. pmbfj308 pmbfj309 pmbfj310 2.pdf Size:68K _philips

DISCRETE SEMICONDUCTORSDATA SHEETPMBFJ308; PMBFJ309;PMBFJ310N-channel silicon field-effecttransistorsProduct specification 1996 Sep 11Supersedes data of April 1995File under Discrete Semiconductors, SC07Philips Semiconductors Product specificationPMBFJ308; PMBFJ309;N-channel silicon field-effect transistorsPMBFJ310FEATURES PINNING - SOT23 Low noisePIN SYMBOL DE

0.3. j308-j309-j310.pdf Size:96K _philips

DISCRETE SEMICONDUCTORSDATA SHEETJ308; J309; J310N-channel silicon field-effecttransistorsProduct specification 1996 Jul 30Supersedes data of April 1995File under Discrete Semiconductors, SC07Philips Semiconductors Product specificationN-channel silicon field-effect transistors J308; J309; J310FEATURES PINNING - TO-92 Low noisePIN SYMBOL DESCRIPTION Interchangea

0.4. mmbfj310.pdf Size:152K _fairchild_semi

J309 MMBFJ309J310 MMBFJ310GSG TO-92S SOT-23NOTE: Source & DrainDD are interchangeableMark: 6U / 6TN-Channel RF AmplifierThis device is designed for VHF/UHF amplifier, oscillator and mixerapplications. As a common gate amplifier, 16 dB at 100 MHz and12 dB at 450 MHz can be realized. Sourced from Process 92.Absolute Maximum Ratings* TA = 25C unless otherwise noted

0.5. j310.pdf Size:561K _fairchild_semi

Discrete POWER & SignalTechnologiesJ309 MMBFJ309J310 MMBFJ310GDG TO-92S SOT-23 SDMark: 6U / 6TN-Channel RF AmplifierThis device is designed for VHF/UHF amplifier, oscillator and mixerapplications. As a common gate amplifier, 16 dB at 100 MHz and12 dB at 450 MHz can be realized. Sourced from Process 92.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbo

0.6. j309 j310 mmbfj309 mmbfj310.pdf Size:207K _fairchild_semi

December 2010J309 / J310 / MMBFJ309 / MMBFJ310N-Channel RF AmplifierFeatures This device is designed for VHF/UHF amplifier, oscillator and mixer applications. As a common gate amplifier, 16 dB at 100 MHz and 12 dB at 450 MHz can be realized. Sourced from Process 92. Source & Drain are interchangeable.J309 MMBFJ309J310 MMBFJ310GSSOT-23G TO-92 Mark MMBFJ309

0.7. j308 sst308 j309 sst309 j310 sst310 u309 u310.pdf Size:96K _vishay

J/SST/U308 SeriesVishay SiliconixN-Channel JFETsJ308 SST308 U309J309 SST309 U310J310 SST310PRODUCT SUMMARYPart Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA)J308 -1 to -6.5 -25 8 12J309 -1 to -4 -25 10 12J310 -2 to -6.5 -25 8 24SST308 -1 to -6.5 -25 8 12SST309 -1 to -4 -25 10 12SST310 -2 to -6.5 -25 8 24U309 -1 to -4 -25 10 12U310 -2.5 to -6 -25 10

0.8. cmpfj310.pdf Size:49K _central

0.9. j309g j310g.pdf Size:66K _onsemi

J309, J310Preferred Device JFET VHF/UHF AmplifiersN-Channel DepletionFeatureshttp://onsemi.com Pb-Free Packages are Available*1 DRAINMAXIMUM RATINGSRating Symbol Value Unit3Drain-Source Voltage VDS 25 VdcGATEGate -Source Voltage VGS 25 VdcForward Gate Current IGF 10 mAdc2 SOURCETotal Device Dissipation @ TA = 25C PD 350 mWDerate above = 25C 2.8 mW/

0.10. mmbfj309lt1 mmbfj310lt1.pdf Size:144K _onsemi

MMBFJ309LT1G,MMBFJ310LT1GJFET - VHF/UHF AmplifierTransistorN-Channelhttp://onsemi.comFeatures2 SOURCE These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant3GATEMAXIMUM RATINGSRating Symbol Value Unit1 DRAINDrain-Source Voltage VDS 25 VdcGate-Source Voltage VGS 25 VdcGate Current IG 10 mAdc3SOT-23 (TO-236)THERMAL CHARACTERISTICS CASE 31

0.11. smmbfj310lt1g smmbfj310lt3g.pdf Size:101K _onsemi

MMBFJ309L, MMBFJ310L,SMMBFJ310LJFET - VHF/UHF AmplifierTransistorN-Channelhttp://onsemi.comFeatures2 SOURCE Drain and Source are Interchangeable S Prefix for Automotive and Other Applications Requiring Unique3Site and Control Change Requirements; AEC-Q101 Qualified andGATEPPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS1 DRAINCo

0.12. j308 j309 j310 sst308 sst310 sst309 u309 u310.pdf Size:98K _siliconix

J/SST/U308 SeriesN-Channel JFETsJ308 SST308 U309J309 SST309 U310J310 SST310Product SummaryPart Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA)J308 1 to 6.5 25 8 12J309 1 to 4 25 10 12J310 2 to 6.5 25 8 24SST308 1 to 6.5 25 8 12SST309 1 to 4 25 10 12SST310 2 to 6.5 25 8 24U309 1 to 4 25 10 12

Datasheet: FW274, FW282, FW707, FW811, FW812, FW813, FW906, FW907, IRF730, MCH3374, MCH3377, MCH3383, MCH3475, MCH3477, MCH3484, MCH6320, MCH6321.

J310 Datasheet Pdf

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